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dc.contributor.authorZeng, HKen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.date.accessioned2014-12-08T15:44:40Z-
dc.date.available2014-12-08T15:44:40Z-
dc.date.issued2000-11-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0921-4534(00)01450-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/30148-
dc.description.abstractRecently, we have succeeded in fabricating HTS ring resonators by using the double-side YBCO films deposited on LaAlO3 (LAO) substrates. Quality factor (Q) over 10(4) at 5 K with resonating frequency of 3.61 GHz has been demonstrated. Furthermore, by creating a narrow gap in the same ring structure, we found that the resonating frequency splits into two, one occurred at half and three halves of the original one (i.e. at 1.80 GHz and 5.33 GHz, respectively). The temperature dependence of the resonating frequency and Q-value were studied in detail. We found that although the resonating frequency changes by introducing the gap, the Q-value remains essentially unchanged.en_US
dc.language.isoen_USen_US
dc.titleEffects of split gap on the microwave properties of YBCO microstrip ring resonatoren_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0921-4534(00)01450-7en_US
dc.identifier.journalPHYSICA Cen_US
dc.citation.volume341en_US
dc.citation.issueen_US
dc.citation.spage2665en_US
dc.citation.epage2666en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000165856000240-
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