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dc.contributor.authorMiao, HWen_US
dc.contributor.authorDuh, JGen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:44:43Z-
dc.date.available2014-12-08T15:44:43Z-
dc.date.issued2000-11-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1023/A:1008928729212en_US
dc.identifier.urihttp://hdl.handle.net/11536/30177-
dc.description.abstractThe eutectic SnBi solder alloy is a candidate for Pb-free replacement of the conventional eutectic SnPb solders. This study presents series of results on the binary eutectic SnBi and ternary SnBi-1 wt % Cu a solder joints. Compositional analysis and wettability of the as-fabricated solder alloys are reported. In addition, microstructure, adhesion strength, fracture surface and contact resistance of the solder joints are also evaluated. The results of the wetting balance show that the addition of 1 wt % Cu has little effect on the contact angle of the eutectic SnBi solder alloy with various metallization layers. The adhesion strength of solder joints degrades abruptly after 2000 thermal cycles. In addition, thermal cycling would result in cracking in the solder joints, which is due to the mismatch in thermal expansion coefficients. Portions of the thermal fatigue cracks nucleate at the edge of the solder fillet, and then propagate along the solder/conductor interface. Some cracks are, however, through the Al2O3 substrate. The contact resistance of the solder/Cu joint does not increase after thermal cycling since the resistivity of Cu6Sn5 is lower than that of the solder. The solder joints of 42Sn-58Bi/Cu, SnBi-1Cu/Cu, 42Sn-58Bi/PtAg, and SnBi-1Cu/PtAg assemblies maintain their integrity after 2000 thermal cycles since the increase in contact resistance is rather small (DeltaR <0.5 m Omega). (C) 2000 Kluwer Academic Publishers.en_US
dc.language.isoen_USen_US
dc.titleThermal cycling test in Sn-Bi and Sn-Bi-Cu solder jointsen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/A:1008928729212en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume11en_US
dc.citation.issue8en_US
dc.citation.spage609en_US
dc.citation.epage618en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000166360700006-
dc.citation.woscount14-
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