Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ting, CC | en_US |
dc.contributor.author | Chen, SY | en_US |
dc.contributor.author | Liu, DM | en_US |
dc.date.accessioned | 2014-12-08T15:44:44Z | - |
dc.date.available | 2014-12-08T15:44:44Z | - |
dc.date.issued | 2000-10-15 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30200 | - |
dc.description.abstract | A dense rutile TiO2 thin film was synthesized by the thermal oxidation of a sputtered titanium metal film in ambient air. The effects on optical properties of TiO2 films of the crystal structure and microstructural evolution at various oxidation temperatures were investigated. The Ti films transformed into single-phase rutile TiO2 at temperatures greater than or equal to 550 degrees C without going through an anatase-to-rutile transformation. Instead, an additional crystalline Ti2O phase was detected at 550 degrees C only. An increase in the oxidation temperatures ranging between 700 and 900 degrees C led to an increase in both the refractive index and absorption coefficient, but a decrease in the band gap energy (E-g). According to the coherent potential approximation model, the band gap evolution of the oxidized films was primarily attributed to the electronic disorder due to oxygen deficiency at a higher oxidation temperature rather than the presence of an amorphous component in the prepared films. (C) 2000 American Institute of Physics. [S0021-8979(00)07920-2]. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Structural evolution and optical properties of TiO2 thin films prepared by thermal oxidation of sputtered Ti films | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 88 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 4628 | en_US |
dc.citation.epage | 4633 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000089552800026 | - |
dc.citation.woscount | 120 | - |
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