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dc.contributor.authorHsu, MCen_US
dc.contributor.authorKuan, CHen_US
dc.contributor.authorWang, SYen_US
dc.date.accessioned2014-12-08T15:44:45Z-
dc.date.available2014-12-08T15:44:45Z-
dc.date.issued2000-10-02en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/30208-
dc.description.abstractVoltage-controlled multicolor detection with a two-stack GaAs/AlGaAs superlattice structure is reported. Each stack contains a superlattice and current blocking layers. The responsivity of each stack has a voltage-tunable spectral range and can be turned on or off by controlling the bias polarity. In a back-to-back configuration of the two stacks, a variable detection range with peak wavelength at 5.5, 6.8, 8.5, and 10.8 mu m is achieved by changing the applied voltage at 45 K. (C) 2000 American Institute of Physics. [S0003- 6951(00)05037-3].en_US
dc.language.isoen_USen_US
dc.titleMulticolor infrared detection using two stacks of superlattice structures in a back-to-back configurationen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume77en_US
dc.citation.issue14en_US
dc.citation.spage2240en_US
dc.citation.epage2242en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000089524900054-
dc.citation.woscount2-
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