Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen

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DC Field	Value	Language
dc.contributor.author	Chiu, HT	en_US
dc.contributor.author	Wang, CN	en_US
dc.contributor.author	Chuang, SH	en_US
dc.date.accessioned	2014-12-08T15:44:45Z	-
dc.date.available	2014-12-08T15:44:45Z	-
dc.date.issued	2000-10-01	en_US
dc.identifier.issn	0948-1907	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30213	-
dc.description.abstract	Tantalum oxide is a high dielectric material suitable for DRAM applications. CVD results using tert-butyl-imidotris(diethylamido)tantalum precursor are encouraging. AFM (see Figure), XRD, XPS, and Auger indicate that, on annealing, the deposited films crystallize to beta-Ta2O5 with uniform Ta and O distribution. Metal oxide semiconductor (MOS) capacitors fabricated from these films are also evaluated.	en_US
dc.language.iso	en_US	en_US
dc.title	Metal-organic CVD of tantalum oxide from tert-butylimidotris(diethylamido)tantalum and oxygen	en_US
dc.type	Article	en_US
dc.identifier.journal	CHEMICAL VAPOR DEPOSITION	en_US
dc.citation.volume	6	en_US
dc.citation.issue	5	en_US
dc.citation.spage	223	en_US
dc.citation.epage	+	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:000089889400005	-
dc.citation.woscount	14	-
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