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dc.contributor.authorPan, TMen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorLiaw, MCen_US
dc.contributor.authorLu, CPen_US
dc.date.accessioned2014-12-08T15:44:47Z-
dc.date.available2014-12-08T15:44:47Z-
dc.date.issued2000-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/30237-
dc.description.abstractA novel one-step cleaning method has been developed for pre-gate-oxide cleaning to replace the conventional RCA two-step cleaning process. Tetramethyl ammonium hydroxide (TMAH) and ethylenediamine tetraacetic acid (EDTA) are added into the RCA SC-1 cleaning solution to enhance cleaning efficiency. We adapt a robust design methodology (Genichi Taguchi method) to analyze the results of our experiments. Using this novel method, it is found that the optimum conditions are A(1)B(2)C(1)D(1) (A(1): TMAH : NH4OH = 1 : 50, B-2: EDTA concentration is 100 ppm, C-1: cleaning time is 5 min, and D-1: cleaning temperature is 60 degreesC). This novel one-step cleaning method is very promising for future large-sized silicon wafer cleaning processes because it has the advantages of reduced processing time and temperature, cost reduction due to reduced chemical usage and improved performance.en_US
dc.language.isoen_USen_US
dc.subjectRCAen_US
dc.subjectTMAHen_US
dc.subjectEDTAen_US
dc.subjectsurface roughnessen_US
dc.subjectleakage currenten_US
dc.subjectelectric breakdown field (E-bd) and charge-to-breakdown (Q(bd))en_US
dc.titleOptimum conditions for novel one-step cleaning method for pre-gate oxide cleaning using robust design methodologyen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume39en_US
dc.citation.issue10en_US
dc.citation.spage5805en_US
dc.citation.epage5808en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000090139000017-
dc.citation.woscount2-
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