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dc.contributor.authorYang, CCen_US
dc.contributor.authorKo, FHen_US
dc.contributor.authorWang, MYen_US
dc.contributor.authorWang, TKen_US
dc.contributor.authorWu, SCen_US
dc.date.accessioned2014-12-08T15:44:48Z-
dc.date.available2014-12-08T15:44:48Z-
dc.date.issued2000-10-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1393985en_US
dc.identifier.urihttp://hdl.handle.net/11536/30243-
dc.description.abstractThe radioactive tracer technique was applied to investigate the migration and adsorption behaviors of metallic impurities (i.e., Ba, Cs, Zn, and Mn) out of chemically amplified photoresist onto silicon-based underlying substrates. Two important process parameters, i.e., baking temperatures and substrate types (e.g., bare silicon, polysilicon, oxide, and nitride) were evaluated. Our results indicated that the transition metals (Zn and Mn) have lower migration ratios than alkali metal (Cs) and alkaline earth metal (Ba), irrespective of the substrate types and baking temperatures. The transition metals form stable complexes with the coexisting solvents and/or hydrolysis species in the photoresist layer. The size of the metal complex, the drag force in solvent evaporation, and the baking process were found to have significant effects on impurity migration. A new model, together with the metal migration in the chemically amplified photoresist and the subsequent adsorption onto the underlying substrate, was proposed to explain the pathway of the metal migration. This model could explain the migration ratios of metallic impurities out of the photoresist layer onto the substrate surface. (C) 2000 The Electrochemical Society. S0013-4651(00)01-026-0. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleMigration-adsorption mechanism of metallic impurities out of chemically amplified photoresist onto silicon-based substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1393985en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume147en_US
dc.citation.issue10en_US
dc.citation.spage3853en_US
dc.citation.epage3858en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:000089602900045-
dc.citation.woscount2-
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