完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHong, WKen_US
dc.contributor.authorShih, HCen_US
dc.contributor.authorTsai, SHen_US
dc.contributor.authorShu, CTen_US
dc.contributor.authorTarntair, FGen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:44:49Z-
dc.date.available2014-12-08T15:44:49Z-
dc.date.issued2000-09-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.L925en_US
dc.identifier.urihttp://hdl.handle.net/11536/30252-
dc.description.abstractDense, well-separated, and aligned carbon nanotubes have been prepared via bias-enhanced microwave plasma chemical vapor deposition. The turn-on fields defined at the emission current density of 10 mu A/cm(2) are about 3.35 V/mu m, 2.54 V/mu m, and 3.54V/mu m, for the immersion times in PdCl2 of 1 min, 20 min, and 40 min,respectively. The corresponding emission current densities are about 0.97 mA/cm(2), 4.5 mA/cm(2), and 0.44 mA/cm(2) at the electric field of 5 V/mu m. The higher emission current obtained from the aligned carbon nanotubes for the immersion time of 20 min is ascribed to the denser and sharper nanotubes formed in this condition.en_US
dc.language.isoen_USen_US
dc.subjectfield-emissionen_US
dc.subjectaligned carbon nanotubesen_US
dc.subjectbias-enhanced microwave plasma chemical vapor depositionen_US
dc.titleField-emission properties of aligned carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.39.L925en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue9ABen_US
dc.citation.spageL925en_US
dc.citation.epageL928en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000089541300010-
dc.citation.woscount13-
顯示於類別:期刊論文


文件中的檔案:

  1. 000089541300010.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。