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dc.contributor.authorChao, CSen_US
dc.contributor.authorWhang, WTen_US
dc.contributor.authorChuang, KRen_US
dc.date.accessioned2014-12-08T15:44:50Z-
dc.date.available2014-12-08T15:44:50Z-
dc.date.issued2000-09-01en_US
dc.identifier.issn1022-9760en_US
dc.identifier.urihttp://hdl.handle.net/11536/30263-
dc.description.abstractA significant improvement on the electroluminescence threshold voltage from 5.5 volts down to 2.9 volts of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) in the Ca/polymer/ITO diode is observed by incorporating a non-conjugated PMMA into MEH-PPV. The threshold voltage of the material decreases with the poly(methyl methacrylate) (PMMA) content. Near-field scanning absorption and photoluminescence micrographs show that the PMMA domains dispersed in the continuous MEH-PPV phase appear to be similar to sesame seeds embedded in the MEH-PPV pancakes. The resistivity of PMMA is two orders lower than that of MEH-PPV. The excellent electrical conduction of PMMA in Ca/PMMA/ITO glass devices is not due to a pin-hole defect mechanism but may result from the electron hopping from Ca through the carbonyl groups in the PMMA. The significant improvement in the threshold Voltage may be due to the combination of the electron hopping in the thin PMMA sesame seeds and the thinner thickness effect of MEH-PPV in the light emitting layer.en_US
dc.language.isoen_USen_US
dc.subjectpoly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV)en_US
dc.subjectpoly(methyl methacrylate) (PMMA)en_US
dc.subjectlight emitting diodeen_US
dc.subjectnear-field scanning optical micrographs (NSOM)en_US
dc.subjectelectroluminescenceen_US
dc.titleSignificant improvement on the electroluminescence characteristics of MEH-PPV by blending with PMMAen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF POLYMER RESEARCH-TAIWANen_US
dc.citation.volume7en_US
dc.citation.issue3en_US
dc.citation.spage175en_US
dc.citation.epage183en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000165792700006-
dc.citation.woscount3-
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