High quality ultrathin CoTiO3 high-k gate dielectrics

doi:10.1149/1.1391170

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Pan, TM	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Chang, KL	en_US
dc.contributor.author	Hsieh, KC	en_US
dc.date.accessioned	2014-12-08T15:44:51Z	-
dc.date.available	2014-12-08T15:44:51Z	-
dc.date.issued	2000-09-01	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://dx.doi.org/10.1149/1.1391170	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30280	-
dc.description.abstract	A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3/Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2000 The Electrochemical Society. S1099-0062(00)03-095-9. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	High quality ultrathin CoTiO3 high-k gate dielectrics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.1391170	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	3	en_US
dc.citation.issue	9	en_US
dc.citation.spage	433	en_US
dc.citation.epage	434	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000088261000012	-
dc.citation.woscount	12	-
顯示於類別：	期刊論文