Anomalous phosphorus cracker temperature-dependent photoluminescence spectra of InGaP grown by solid source molecular beam epitaxy

Abstract

InGaP grown by solid source molecular beam epitaxy showed lower effective band-gap energy with increasing phosphorus cracker temperature. Anomalous photoluminescence (PL) spectra also indicated that a weaker ordering effect was initiated when the cracker temperature was higher. Since the variation of cracker temperature mainly changed the P-2/P-4 ratio, we believe that the more chemically reactive P-2 incorporates more In into the epilayer. Therefore, InGaP grown under a more Pt-rich condition has a higher In content which results in the lower band-gap energy instead of having an ordering effect.