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dc.contributor.authorChen, CCen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLiang, MSen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorHsien, SKen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorChao, TSen_US
dc.date.accessioned2014-12-08T15:45:05Z-
dc.date.available2014-12-08T15:45:05Z-
dc.date.issued2000-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.848277en_US
dc.identifier.urihttp://hdl.handle.net/11536/30404-
dc.description.abstractPlasma-induced damage in various 3-nm-thick gate oxides (i.e., pure oxides and N2O-nitrided oxides) was investigated by subjecting both nMOS and pMOS antenna devices to a photoresist ashing step after metal pad definition. Both charge-to-break-down and gate leakage current measurements indicated that large leakage current occurs at the wafer center as well as the wafer edge for pMOS devices, while only at the wafer center for nMOS devices. These interesting observations could be explained by the strong polarity dependence of ultra-thin oxides in charge-to breakdown measurements of nMOS devices. In addition, pMOS devices were found to be more susceptible to charging damage, which can be attributed to the intrinsic polarity dependence in tunneling current between n- and p-MOSFET,s. More importantly, our experimental results demonstrated that stress-induced leakage current (SILC) caused by plasma damage can be significantly suppressed in N2O-nitrided oxides, compared to pure oxides, especially for pMOS devices. Finally, nitrided oxides were also found to be more robust when subjected to high temperature stressing. Therefore, nitrided oxides appear to be very promising for reducing plasma charging damage in future ULSI technologies employing ultrathin gate oxides.en_US
dc.language.isoen_USen_US
dc.subjectdielectric breakdownen_US
dc.subjectleakage currenten_US
dc.subjectnitrogenen_US
dc.subjectplasma applicationsen_US
dc.subjectsemiconductor device reliabilityen_US
dc.titlePlasma-induced charging damage in ultrathin (3-nm) gate oxidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.848277en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume47en_US
dc.citation.issue7en_US
dc.citation.spage1355en_US
dc.citation.epage1360en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000087898500010-
dc.citation.woscount11-
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