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dc.contributor.authorSu, K. W.en_US
dc.contributor.authorChang, Y. T.en_US
dc.contributor.authorChen, Y. F.en_US
dc.date.accessioned2014-12-08T15:45:05Z-
dc.date.available2014-12-08T15:45:05Z-
dc.date.issued2008en_US
dc.identifier.isbn978-0-8194-7046-1en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/30409-
dc.identifier.urihttp://dx.doi.org/10.1117/12.762821en_US
dc.description.abstractThe efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO4 crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 mu J at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz.en_US
dc.language.isoen_USen_US
dc.subjectRaman laseren_US
dc.subjectdiode-pumped laseren_US
dc.subjectactively Q-switcheden_US
dc.titleHigh-peak-power diode-pumped actively Q-switched Nd : YAG intracavity Raman laser with an undoped YVO4 crystal - art. no. 68712Jen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/12.762821en_US
dc.identifier.journalSOLID STATE LASERS XVII: TECHNOLOGY AND DEVICESen_US
dc.citation.volume6871en_US
dc.citation.spageJ8712en_US
dc.citation.epageJ8712en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000255549800074-
Appears in Collections:Conferences Paper


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