High-peak-power diode-pumped actively Q-switched Nd : YAG intracavity Raman laser with an undoped YVO4 crystal - art. no. 68712J

doi:10.1117/12.762821

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Chang, Y. T.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.date.accessioned	2014-12-08T15:45:05Z	-
dc.date.available	2014-12-08T15:45:05Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-0-8194-7046-1	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30409	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.762821	en_US
dc.description.abstract	The efficient stimulated Raman scattering conversion in a diode-pumped actively Q-switched Nd:YAG laser was achieved with an undoped YVO4 crystal as a Raman shifter. With an incident pump power of 16.2 W, 1176-nm first Stokes average output power of 2.97 W was generated at a pulse repetition rate of 50 kHz. The maximum pulse energy is higher than 83 mu J at both 20 kHz and 30 kHz. With mode-locked modulation, the effective pulse width far above threshold is usually below 5 ns. With an incident pump power of 7.62 W, the peak-power of 43.5 kW was demonstrated at 20 kHz.	en_US
dc.language.iso	en_US	en_US
dc.subject	Raman laser	en_US
dc.subject	diode-pumped laser	en_US
dc.subject	actively Q-switched	en_US
dc.title	High-peak-power diode-pumped actively Q-switched Nd : YAG intracavity Raman laser with an undoped YVO4 crystal - art. no. 68712J	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1117/12.762821	en_US
dc.identifier.journal	SOLID STATE LASERS XVII: TECHNOLOGY AND DEVICES	en_US
dc.citation.volume	6871	en_US
dc.citation.spage	J8712	en_US
dc.citation.epage	J8712	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000255549800074	-
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