標題: The instability mechanisms of hydrogenated amorphous silicon thin film transistors under AC bias stress
作者: Huang, CY
Teng, TH
Tsai, JW
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: a-Si : H TFT;state creation;charge trapping;AC;duty ratio;RC effect;charge compensation
公開日期: 1-七月-2000
摘要: Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with silicon nitride (SiNx) gates have been stressed under various AC biases to investigate the instability mechanisms. The state creation is dominant at low stress voltage although the charge trapping also occurs in SiNx gates, and such cases have also been found under the DC bias stress. In addition, the degradations of a-Si:H TFTs are found to be independent of the AC frequency for the positive polarity but show frequency dependence for the negative polarity due to the RC effect. Furthermore, the threshold voltage shift is associated with the duty ratio due to the accumulation of stress time. Finally, the degradation of the a-Si:H TFTs under bipolar AC bias stress is also introduced. It is found that the instability mechanisms of devices are composed of different charge compensations in SiNx and redistributions of defect states in the a-Si:H layer.
URI: http://dx.doi.org/10.1143/JJAP.39.3867
http://hdl.handle.net/11536/30410
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.3867
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 7A
起始頁: 3867
結束頁: 3871
顯示於類別:期刊論文


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