完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Huang, S. C. | en_US |
| dc.contributor.author | Su, K. W. | en_US |
| dc.contributor.author | Li, A. | en_US |
| dc.contributor.author | Liu, S. C. | en_US |
| dc.contributor.author | Chen, Y. F. | en_US |
| dc.contributor.author | Hunag, K. F. | en_US |
| dc.date.accessioned | 2014-12-08T15:45:06Z | - |
| dc.date.available | 2014-12-08T15:45:06Z | - |
| dc.date.issued | 2008 | en_US |
| dc.identifier.isbn | 978-0-8194-7046-1 | en_US |
| dc.identifier.issn | 0277-786X | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/30420 | - |
| dc.identifier.uri | http://dx.doi.org/10.1117/12.762962 | en_US |
| dc.description.abstract | We report a high-peak-power AlGaInAs 1.36-mu m vertical-external-cavity surface-emitting laser (VECSEL) optically pumped by a diode-pumped actively Q-switched Nd:GdVO4 1.06-mu m laser under room-temperature operation. The gain medium is an AlGaInAs quantum wells (QWs)/barrier structure grown on a Fe-doped InP substrate by metalorganic chemical-vapor deposition. With an average pump power of 1.9 W, an average output power of 340 mW was obtained at a pulse repetition rate of 40 kHz, corresponding to an optical-to-optical conversion efficiency of 18.76%. With a peak pump power of 7.9 kW, the highest peak output power was 1.3 kW at a pulse repetition rate of 10 kHz. | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | VECSEL | en_US |
| dc.subject | AlGaInAs | en_US |
| dc.subject | high-peak power | en_US |
| dc.title | AlGaInAs quantum-well 1.3-mu m laser by a diode-pumped actively Q-switched Nd : GdVO4 laser - art. no. 68712K | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1117/12.762962 | en_US |
| dc.identifier.journal | SOLID STATE LASERS XVII: TECHNOLOGY AND DEVICES | en_US |
| dc.citation.volume | 6871 | en_US |
| dc.citation.spage | K8712 | en_US |
| dc.citation.epage | K8712 | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.identifier.wosnumber | WOS:000255549800075 | - |
| 顯示於類別： | 會議論文 | |
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- Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laser / Su, K. W.;Chen, Yi-Fan;Huang, S. C.;Li, A.;Liu, S. C.
- High-peak-power AlGaInAs quantum-well 1.3-mu m laser pumped by a diode-pumped actively Q-switched solid-state laser / Su, KW;Huang, SC;Li, A;Liu, SC;Chen, YF
- High-peak-power flashlamp-pumped passively Q-switched Nd : YAG laser with AlGaInAs quantum wells as a saturable absorbers - art. no. 68712M / Liang, H. C.;Huang, J. Y.;Huang, S. C.;Su, K. W.;Chen, Y. F.
- High-peak-power diode-pumped actively Q-switched Nd : YAG intracavity Raman laser with an undoped YVO4 crystal - art. no. 68712J / Su, K. W.;Chang, Y. T.;Chen, Y. F.
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