Novel cleaning solutions for polysilicon film post chemical mechanical polishing

doi:10.1109/55.847373

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Pan, TM	en_US
dc.contributor.author	Lei, TF	en_US
dc.contributor.author	Chen, CC	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Liaw, MC	en_US
dc.contributor.author	Yang, WL	en_US
dc.contributor.author	Tsai, MS	en_US
dc.contributor.author	Lu, CP	en_US
dc.contributor.author	Chang, WH	en_US
dc.date.accessioned	2014-12-08T15:45:06Z	-
dc.date.available	2014-12-08T15:45:06Z	-
dc.date.issued	2000-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.847373	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30422	-
dc.description.abstract	Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination, From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.	en_US
dc.language.iso	en_US	en_US
dc.subject	cleaning	en_US
dc.subject	CMP	en_US
dc.subject	EDTA	en_US
dc.subject	polysilicon	en_US
dc.subject	TMAH	en_US
dc.title	Novel cleaning solutions for polysilicon film post chemical mechanical polishing	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.847373	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	7	en_US
dc.citation.spage	338	en_US
dc.citation.epage	340	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000087898300004	-
dc.citation.woscount	13	-
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