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dc.contributor.authorPan, TMen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorChen, CCen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorLiaw, MCen_US
dc.contributor.authorYang, WLen_US
dc.contributor.authorTsai, MSen_US
dc.contributor.authorLu, CPen_US
dc.contributor.authorChang, WHen_US
dc.date.accessioned2014-12-08T15:45:06Z-
dc.date.available2014-12-08T15:45:06Z-
dc.date.issued2000-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.847373en_US
dc.identifier.urihttp://hdl.handle.net/11536/30422-
dc.description.abstractNovel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH4OH+H2O) alkaline aqueous solution to enhance removal of metallic and organic contamination, From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.en_US
dc.language.isoen_USen_US
dc.subjectcleaningen_US
dc.subjectCMPen_US
dc.subjectEDTAen_US
dc.subjectpolysiliconen_US
dc.subjectTMAHen_US
dc.titleNovel cleaning solutions for polysilicon film post chemical mechanical polishingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.847373en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue7en_US
dc.citation.spage338en_US
dc.citation.epage340en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000087898300004-
dc.citation.woscount13-
Appears in Collections:Articles


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