完整後設資料紀錄
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dc.contributor.authorCheng, CMen_US
dc.contributor.authorYang, CFen_US
dc.contributor.authorLo, SHen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:45:06Z-
dc.date.available2014-12-08T15:45:06Z-
dc.date.issued2000-07-01en_US
dc.identifier.issn0955-2219en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0955-2219(99)00247-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/30426-
dc.description.abstractAfter calcining BaCO3 + 4TiO(2) mixed powder at 1150 degrees C for 2 h, BaTi4O9 is the major phase, Ba4Ti13O30 and BaTi5O11 are minor phases. After calcining 2BaCO(3) + 9TiO(2) mixed powder at 1200 degrees C for 10 h, Ba2Ti9O20 is the major phase, BaTi4O9 and BaTi5O11 are the minor phases. The calcining powders are used as the BaTi4O9 and Ba2Ti9O20 precursors. MgO-CaO-SiO2-Al2O3 (MCAS) composite glass powder, fabricated by sol-gel method, is used as the low melting addition to lower the sintering temperatures of BaTi4O9 and Ba2Ti9O20 dielectric. The addition of MCAS glass does not inhibit the residual satellite phases to transform into BaTi4O9 and Ba2Ti9O20. For MCAS-doped BaTi4O9 and Ba2Ti9O20 ceramics the major phases are BaTi4O9 and Ba2Ti9O20, cordierite is observed as minor phase. The temperatures needed to densify the BaTi4O9 and Ba2Ti9O20 ceramics are lowered down with the increase amount of MCAS glass addition. For BaTi4O9 and Ba2Ti9O20 ceramics, both the densities and the dielectric constants (at 1 MHz) increase with the sintering temperature and decrease with the amount of MCAS glass addition. (C) 2000 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBaTi4O9en_US
dc.subjectBa2Ti9O20en_US
dc.subjectcalcinationen_US
dc.subjectglass sintering aiden_US
dc.subjectsinteringen_US
dc.titleSintering BaTi4O9/Ba2Ti9O20-based ceramics by glass additionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0955-2219(99)00247-2en_US
dc.identifier.journalJOURNAL OF THE EUROPEAN CERAMIC SOCIETYen_US
dc.citation.volume20en_US
dc.citation.issue8en_US
dc.citation.spage1061en_US
dc.citation.epage1067en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000087098100006-
dc.citation.woscount30-
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