完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Shih, PS | en_US |
dc.contributor.author | Zan, HW | en_US |
dc.contributor.author | Chang, TC | en_US |
dc.contributor.author | Huang, TY | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.date.accessioned | 2014-12-08T15:45:10Z | - |
dc.date.available | 2014-12-08T15:45:10Z | - |
dc.date.issued | 2000-07-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.39.3879 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30445 | - |
dc.description.abstract | N-channcl and p-channel polysilicon thin him transistors (poly-Si TFTs) with different geometries were fabricated and characterized to study the interactive effects of active channel area on drain current. We find that for both non-passivated and passivated p-TFTs, since no avalanche multiplication is involved, the drain current is increased with reduced active channel area due to the reduction of grain-boundary trap density. In contrast, a somewhat unexpected trap dependence of the kink effect is observed in n-TFTs. Consequently, the dependence of active channel area on drain current differs between non-passivated n-TFTs with large trap density and passivated n-TFTs with small trap density. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | poly-Si TFT | en_US |
dc.subject | dimensional effect | en_US |
dc.subject | drain current | en_US |
dc.subject | grain-boundary trap density | en_US |
dc.subject | kink effect | en_US |
dc.title | Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.39.3879 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | en_US |
dc.citation.volume | 39 | en_US |
dc.citation.issue | 7A | en_US |
dc.citation.spage | 3879 | en_US |
dc.citation.epage | 3882 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000088909900008 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |