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dc.contributor.authorChang, KMen_US
dc.contributor.authorYang, JYen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorTsai, JYen_US
dc.date.accessioned2014-12-08T15:45:10Z-
dc.date.available2014-12-08T15:45:10Z-
dc.date.issued2000-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.3930en_US
dc.identifier.urihttp://hdl.handle.net/11536/30446-
dc.description.abstractThe oxygen plasma via resist strip process causes significant damage to organic spin on polymer (Allied Signal X-720); thus its inter-level dielectric application is limited. A simple treatment technology, reactive glass stabilization (RGS), using reactive ion is proposed to reform the X-720 film surface. The reactive ion modification of the X-720 film can improve the resistance against oxygen plasma. The measurements of stress, thickness variation, scanning electron microscope (SEM) micrographs of gap filling and dielectric constant show that RGS can be practically used in the low dielectric material application with non-etch-back process. The measurements of fourier transform infrared (FTIR) spectroscopy, and auger electron spectroscopy (AES) show that RGS can effectively reform the surface of the X-720 film and increase the ashing resistance even in high carbon content spin on polymer.en_US
dc.language.isoen_USen_US
dc.subjectspin-on polymeren_US
dc.subjectinter-level dielectricen_US
dc.subjectashing resistanceen_US
dc.subjectreactive glass stabilizationen_US
dc.titleReactive ion pretreatment technique to improve the ashing resistance of low dielectric constant high carbon content polymeren_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.39.3930en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume39en_US
dc.citation.issue7Aen_US
dc.citation.spage3930en_US
dc.citation.epage3934en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000088909900017-
dc.citation.woscount2-
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