標題: Carrier-carrier scattering in GaAs/AlxGa1-xAs quantum wells
作者: Sun, KW
Song, TS
Sun, CK
Wang, JC
Kane, MG
Wang, SY
Lee, CP
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-六月-2000
摘要: We have studied carrier dynamics in highly nonequilibrium two-dimensional (2D) carrier distributions generated with femtosecond laser pulses in p-doped GaAs/Al0.32Ga0.68As quantum wells at photoexcited carrier densities between 10(9) and 10(11) cm(-2). The initially nonthermal carrier distribution is quickly broadened due to inelastic carrier-carrier scattering, with the broadening rate increasing as carrier density is increased. Measurements of the unrelaxed peak height in the hot electron-neutral acceptor luminescence spectra are compared with calculations of the carrier distribution using integration of the 2D dynamically screened Boltzmann equation. Our results indicate that carrier-carrier scattering becomes as significant a scattering mechanism as LO-phonon emission at density of about 10(10) cm(-2).
URI: http://dx.doi.org/10.1103/PhysRevB.61.15592
http://hdl.handle.net/11536/30458
ISSN: 1098-0121
DOI: 10.1103/PhysRevB.61.15592
期刊: PHYSICAL REVIEW B
Volume: 61
Issue: 23
起始頁: 15592
結束頁: 15595
顯示於類別:期刊論文


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