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dc.contributor.authorChen, CCen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorLiang, MSen_US
dc.date.accessioned2014-12-08T15:45:15Z-
dc.date.available2014-12-08T15:45:15Z-
dc.date.issued2000-06-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1391127en_US
dc.identifier.urihttp://hdl.handle.net/11536/30503-
dc.description.abstractEffects of fluorine incorporation on ultrathin (4 nm) gate oxide integrity were investigated by fluorine co-implantation into p(+) polysilicon gate. In contrast to previous reports that fluorine incorporation worsens boron penetration and degrades oxide reliability, it was observed that with a medium F+ dose (similar to 1 x 10(14) cm(-2)), charge-to-breakdown characteristics can be improved without noticeable enhancement of boron penetration. It was also observed that fluorinated oxide depicts improved immunity to plasma damage as is evidenced by suppressed gate leakage current of antenna devices after plasma processing. (C) 2000 The Electrochemical Society. S1099-0062(00)01-101-9. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleImproved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantationen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1391127en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume3en_US
dc.citation.issue6en_US
dc.citation.spage290en_US
dc.citation.epage292en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000086552500013-
dc.citation.woscount2-
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