標題: | Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy |
作者: | Huang, HY Shu, CK Lin, WC Chuang, CH Lee, MC Chen, WK Lee, YY 電子物理學系 Department of Electrophysics |
公開日期: | 29-五月-2000 |
摘要: | Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of the donor-bound-exciton transition of undoped GaN exhibits a strong dependence on temperature. When In is doped into the film, the recombination lifetime decreases sharply from 68 to 30 ps, regardless of the measured temperature and In source flow rate. These observations might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process. (C) 2000 American Institute of Physics. [S0003- 6951(00)02622-X]. |
URI: | http://hdl.handle.net/11536/30510 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 76 |
Issue: | 22 |
起始頁: | 3224 |
結束頁: | 3226 |
顯示於類別: | 期刊論文 |