標題: Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopy
作者: Chen, RP
Lin, DS
物理研究所
Institute of Physics
關鍵字: hydrogen atom;scanning tunneling microscopy;silicon;surface electronic phenomena (work function, surface potential, surface states, etc.);surface energy;thermal desorption
公開日期: 20-五月-2000
摘要: Hydrogen recombinative desorption from a Si2H2 monohydride dimer on the Si(100) surface regenerates a dangling bond (DB) pair on the dimer. In this paper, we investigated the spatial distribution of the regenerated DB pairs on the Si(100)-2 x 1:H and disilane-passivated Si(100) surface using elevated temperature scanning tunneling microscopy (HT-STM) in the temperature range between 590 and 622 K. Experimental results indicate that the ends of one-dimensional (1D) monohydride dimer islands are preferred sites for DB pairs and a repulsive interaction occurs between two neighboring DB pairs in the same dimer row. (C) 2000 Elsevier Science B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/S0039-6028(00)00199-0
http://hdl.handle.net/11536/30513
ISSN: 0039-6028
DOI: 10.1016/S0039-6028(00)00199-0
期刊: SURFACE SCIENCE
Volume: 454
Issue: 
起始頁: 196
結束頁: 200
顯示於類別:會議論文


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