標題: | Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopy |
作者: | Chen, RP Lin, DS 物理研究所 Institute of Physics |
關鍵字: | hydrogen atom;scanning tunneling microscopy;silicon;surface electronic phenomena (work function, surface potential, surface states, etc.);surface energy;thermal desorption |
公開日期: | 20-五月-2000 |
摘要: | Hydrogen recombinative desorption from a Si2H2 monohydride dimer on the Si(100) surface regenerates a dangling bond (DB) pair on the dimer. In this paper, we investigated the spatial distribution of the regenerated DB pairs on the Si(100)-2 x 1:H and disilane-passivated Si(100) surface using elevated temperature scanning tunneling microscopy (HT-STM) in the temperature range between 590 and 622 K. Experimental results indicate that the ends of one-dimensional (1D) monohydride dimer islands are preferred sites for DB pairs and a repulsive interaction occurs between two neighboring DB pairs in the same dimer row. (C) 2000 Elsevier Science B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0039-6028(00)00199-0 http://hdl.handle.net/11536/30513 |
ISSN: | 0039-6028 |
DOI: | 10.1016/S0039-6028(00)00199-0 |
期刊: | SURFACE SCIENCE |
Volume: | 454 |
Issue: | |
起始頁: | 196 |
結束頁: | 200 |
顯示於類別: | 會議論文 |