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dc.contributor.authorLIAUH, HRen_US
dc.contributor.authorCHEN, MCen_US
dc.contributor.authorCHEN, JFen_US
dc.contributor.authorCHEN, LJen_US
dc.contributor.authorLUR, Wen_US
dc.contributor.authorCHU, CHen_US
dc.date.accessioned2014-12-08T15:04:34Z-
dc.date.available2014-12-08T15:04:34Z-
dc.date.issued1993-04-01en_US
dc.identifier.issn0168-583Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/3055-
dc.description.abstractAn investigation on the influences of doping impurities on the formation of titanium silicide has been carried out. The formation of polycrystalline silicide was observed to be retarded by the presence of As in Ti/As+-Si samples compared with those in Ti/BF2+-Si samples. Superior thermal stability of TiSi2 was found to occur in BF2+ implanted samples than that in blank and As+ implanted samples. The resistance to island formation in BF2+ implanted samples is attributed to the retardation of grain growth by the segregation of fluorine atoms at the grain boundaries.en_US
dc.language.isoen_USen_US
dc.titleINTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SIen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMSen_US
dc.citation.volume74en_US
dc.citation.issue1-2en_US
dc.citation.spage134en_US
dc.citation.epage137en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1993KW15400027-
Appears in Collections:Conferences Paper


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