INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIAUH, HR	en_US
dc.contributor.author	CHEN, MC	en_US
dc.contributor.author	CHEN, JF	en_US
dc.contributor.author	CHEN, LJ	en_US
dc.contributor.author	LUR, W	en_US
dc.contributor.author	CHU, CH	en_US
dc.date.accessioned	2014-12-08T15:04:34Z	-
dc.date.available	2014-12-08T15:04:34Z	-
dc.date.issued	1993-04-01	en_US
dc.identifier.issn	0168-583X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3055	-
dc.description.abstract	An investigation on the influences of doping impurities on the formation of titanium silicide has been carried out. The formation of polycrystalline silicide was observed to be retarded by the presence of As in Ti/As+-Si samples compared with those in Ti/BF2+-Si samples. Superior thermal stability of TiSi2 was found to occur in BF2+ implanted samples than that in blank and As+ implanted samples. The resistance to island formation in BF2+ implanted samples is attributed to the retardation of grain growth by the segregation of fluorine atoms at the grain boundaries.	en_US
dc.language.iso	en_US	en_US
dc.title	INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SI	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.journal	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS	en_US
dc.citation.volume	74	en_US
dc.citation.issue	1-2	en_US
dc.citation.spage	134	en_US
dc.citation.epage	137	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1993KW15400027	-
顯示於類別：	會議論文