標題: | Improved contact performance of GaN film using Si diffusion |
作者: | Lin, CF Cheng, HC Chi, GC Bu, CJ Feng, MS 材料科學與工程學系 電子工程學系及電子研究所 奈米中心 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics Nano Facility Center |
公開日期: | 3-四月-2000 |
摘要: | In this letter, we investigate a metalization process for reducing the contact resistance on undoped GaN layers. The Si metal source was diffused successfully into the GaN films by using SiOx/Si/GaN/Al2O3 structures. By using a high-temperature annealing process, we diffused and activated the Si atoms into the GaN film. This caused a heavy doped n-type GaN layer to be formed near the GaN surface. Under high temperatures, such as a diffusion process at 1000 degrees C, the as-deposited Ni/Al/Ti contact had good ohmic properties and a low specific contact resistivity (rho(c)) of 1.6 x 10(-3) Ohm cm(2). Rapid thermal annealing the contact at 800 degrees C for 30 s caused the rho(c) to decrease rapidly to 5.6 x 10(-7) Ohm cm(2). The Ni/Al/Ti contact characteristics on the GaN films diffused at various temperatures are also discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)02114-8]. |
URI: | http://hdl.handle.net/11536/30587 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 76 |
Issue: | 14 |
起始頁: | 1878 |
結束頁: | 1880 |
顯示於類別: | 期刊論文 |