標題: | Deposition of heteroepitaxial diamond on 6H-SiC single crystal by bias-enhanced microwave plasma chemical vapor deposition |
作者: | Chang, L Yan, JE Chen, FR Kai, JJ 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | bias;heteroepitaxy;silicon carbide;transmission electron microscopy |
公開日期: | 1-四月-2000 |
摘要: | Deposition of heteroepitaxial diamond on substrates of 6H-SiC single crystal by a d.c. voltage biased-enhanced microwave plasma chemical vapor deposition method has been attempted. Various concentrations of methane (CH4) up to 10% in hydrogen (H-2) was used to evaluate its effect on epitaxy. Characterization of cross-sectional transmission electron microscopy with electron energy loss spectroscopy shows that an interlayer can form between diamond 6H-SiC, depending on the CH4 concentration. With low CH4 concentration, diamond was directly nucleated on 6H-SiC with an orientation relationship of diamond {111}//6H-SiC {0001} and diamond [110]//6H-SiC [11 (2) over bar 0]. (C) 2000 Elsevier Science S.A. All rights reserved. |
URI: | http://dx.doi.org/10.1016/S0925-9635(99)00333-7 http://hdl.handle.net/11536/30589 |
ISSN: | 0925-9635 |
DOI: | 10.1016/S0925-9635(99)00333-7 |
期刊: | DIAMOND AND RELATED MATERIALS |
Volume: | 9 |
Issue: | 3-6 |
起始頁: | 283 |
結束頁: | 289 |
顯示於類別: | 會議論文 |