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dc.contributor.authorWuu, DSen_US
dc.contributor.authorHorng, RHen_US
dc.contributor.authorLiao, FCen_US
dc.contributor.authorLeu, CCen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorSze, SMen_US
dc.contributor.authorChen, HYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:45:26Z-
dc.date.available2014-12-08T15:45:26Z-
dc.date.issued2000-04-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://hdl.handle.net/11536/30599-
dc.description.abstractThe effects of plasma surface treatment, using NH3 gas, of Ba0.7Sr0.3TiO3 (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the nonplasma-treated sample at an applied voltage of 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH3 plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant. (C) 2000 Elsevier Science Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleCharacterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume40en_US
dc.citation.issue4-5en_US
dc.citation.spage663en_US
dc.citation.epage666en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000087433200026-
Appears in Collections:Conferences Paper


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