A NEW IV MODEL FOR SHORT GATE-LENGTH MESFETS

Abstract

A new I-V model for short gate-length MESFET's operated in the turn-on region is proposed, in which the two-dimensional potential distribution contributed by the depletion-layer charges under the gate and in the ungate region are separately obtained by conventional 1D approximation and Green's function solution technique. Moreover, the bias-dependent parasitic resistances due to the modulation of depletion layer in the ungate region for non-self-alignment MESFET's are also taken into account in the developed I-V model. It is shown that good agreements are obtained between the developed new I-V model and the results of 2D numerical analysis. Moreover, comparisons between the proposed analytical model and the experimental data are made and excellent agreements are obtained.