Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lue, JT | en_US |
dc.contributor.author | Liang, SY | en_US |
dc.contributor.author | Lee, YW | en_US |
dc.contributor.author | Lue, HT | en_US |
dc.date.accessioned | 2014-12-08T15:45:32Z | - |
dc.date.available | 2014-12-08T15:45:32Z | - |
dc.date.issued | 2000-04-01 | en_US |
dc.identifier.issn | 0577-9073 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30633 | - |
dc.description.abstract | Multilayer of Nb/Ti and NbN/Ti films with 30 periodic structure were sputtered onto silicon substrates. The current-voltage characteristics measured along the vertical junction at low temperatures exhibit nonlinear step-wise curves. The resonant subband quantum tunneling in the metallic multiple quantum wells can satisfactorily express these peculiar behaviors. The Fermi and anti-Fermi glass transition showing itinerant metallic and insulating conduction properties are also observed at low currents and near critical temperatures. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Fermi and anti-Fermi glass transition and subband resonant quantum tunneling in Nb/Ti metallic multilayer films | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 339 | en_US |
dc.citation.epage | 344 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000086700400020 | - |
Appears in Collections: | Conferences Paper |