標題: | Reduction of epitaxial alignment in n(+)-p poly-Si emitter diode due to gettering of P and As by Ar implantation |
作者: | Lee, LS Lee, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 16-三月-2000 |
摘要: | It is demonstrated that Ar implantation can retard the epitaxial realignment of poly-Si/Si in an As- or P-doped n(+)-p poly-emitter diode during BF2 implantation. This is believed to be due to the gettering of As, P, and F by bubble-like defects created by the Ar implantation used to reduce the pile-up of these dopants at the poly-Si/Si interface. Consequently, there is less break-up of the interface oxide, resulting in a reduction in epitaxial realignment. |
URI: | http://dx.doi.org/10.1049/el:20000379 http://hdl.handle.net/11536/30650 |
ISSN: | 0013-5194 |
DOI: | 10.1049/el:20000379 |
期刊: | ELECTRONICS LETTERS |
Volume: | 36 |
Issue: | 6 |
起始頁: | 579 |
結束頁: | 581 |
顯示於類別: | 期刊論文 |