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dc.contributor.authorChen, SYen_US
dc.contributor.authorLee, VCen_US
dc.date.accessioned2014-12-08T15:45:34Z-
dc.date.available2014-12-08T15:45:34Z-
dc.date.issued2000-03-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/30653-
dc.description.abstractFerroelectric thin films of bismuth-containing layered perovskite Sr0.8Bi2.4Ta2O9 (SBT) have been prepared by both metalorganic decomposition (designated as MOD-SBT film) and magnetron sputtering (designated as sputtering-SBT film) processes. SBT thin films are well known to exhibit free-fatigue behavior with electrical field cycling. However, it was found that after the SBT films were applied with electrical field display, the polarization reduction with time was observed. The aging rate was related to microstructure, which in turn was dependent on the film processing. The sputtering-SBT films show a slower degradation rate than MOD-SBT films. The suppressed polarization can be near-completely recovered by applying either thermal treatment above 150 degrees C or electric-field cycling. There exists a minimum required thermal energy to restore the polarization. The easy recovery exhibited by SBT films in suppressed polarization reveals that a relatively weak domain pinning may exist between domain wall and electronic defects in SBT. The SBT shows little fatigue behavior during electric field cycling but exhibits an aging phenomenon after applied electric field. (C) 2000 American Institute of Physics. [S0021-8979(00)04906-9].en_US
dc.language.isoen_USen_US
dc.titleAging behavior and recovery of polarization in Sr0.8Bi2.4Ta2O9 thin filmsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume87en_US
dc.citation.issue6en_US
dc.citation.spage3050en_US
dc.citation.epage3055en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000085531400060-
dc.citation.woscount14-
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