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dc.contributor.authorLin, CMen_US
dc.contributor.authorChuu, DSen_US
dc.date.accessioned2014-12-08T15:45:40Z-
dc.date.available2014-12-08T15:45:40Z-
dc.date.issued2000-02-28en_US
dc.identifier.issn0375-9601en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0375-9601(00)00050-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/30721-
dc.description.abstractThe energy-dispersive X-ray-diffraction (EDXD) and Raman spectroscopy are used to study phase transitions of Zn0.83Mn0.17Se thin film up to 17.5 and 16.1 GPa, respectively. The EDXD results show that possible zinc blende(B3) to sodium chloride phase(B1) structure transition for Zn0.83Mn0.17Se thin film occurs at 10.0 GPa. The unloading run reveals a reversible phase transition existed in the Zn0.83Mn0.17Se thin film. For micro-Raman spectra at ambient pressure, three Raman peaks are distinct as LO, TO, and Mn local modes in Zn1-xMnxSe bulk. As the pressure is increased to 10.9 GPa, metallization occurs, the LO and Mn local phonon peaks disappear while the two unidentified Raman peaks of TO mode are still observable above the metallization pressure till 17.5 GPa. The phase transition pressure P-t obtained from the results of micro-Raman spectra seems to be in good agreement with that obtained by EDXD measurements. (C) 2000 Published by Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleHigh-pressure phase transitions in Zn0.83Mn0.17Se thin filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0375-9601(00)00050-5en_US
dc.identifier.journalPHYSICS LETTERS Aen_US
dc.citation.volume266en_US
dc.citation.issue4-6en_US
dc.citation.spage435en_US
dc.citation.epage440en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000085767700034-
dc.citation.woscount5-
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