Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes

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DC 欄位	值	語言
dc.contributor.author	Chiou, SW	en_US
dc.contributor.author	Lee, CP	en_US
dc.contributor.author	Huang, CK	en_US
dc.contributor.author	Chen, CW	en_US
dc.date.accessioned	2014-12-08T15:45:40Z	-
dc.date.available	2014-12-08T15:45:40Z	-
dc.date.issued	2000-02-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30724	-
dc.description.abstract	A structure for high brightness light-emitting diodes (LEDs) is demonstrated. A distributed Bragg reflector (DBR) is used to enhance the quantum efficiency of the LEDs. This unique DBR uses a composite structure that consists of two DBRs to provide both high reflectivity and wide angle reflection. For 590 nm (amber range) AlGaInP LEDs, the quantum efficiency is increased to 5.05% by using this composite DBR structure. This result is much better than those obtained from conventional DBRs, and is comparable to that of wafer bonded AlGaInP LEDs. (C) 2000 American Institute of Physics. [S0021-8979(00)01704-7].	en_US
dc.language.iso	en_US	en_US
dc.title	Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	87	en_US
dc.citation.issue	4	en_US
dc.citation.spage	2052	en_US
dc.citation.epage	2054	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000084992500072	-
dc.citation.woscount	26	-
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