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dc.contributor.authorChang, TCen_US
dc.contributor.authorLiu, PTen_US
dc.contributor.authorYang, YLen_US
dc.contributor.authorHu, JCen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:45:43Z-
dc.date.available2014-12-08T15:45:43Z-
dc.date.issued2000-02-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.L82en_US
dc.identifier.urihttp://hdl.handle.net/11536/30756-
dc.description.abstractA novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.en_US
dc.language.isoen_USen_US
dc.subjectbarrieren_US
dc.subjectmulti-stacked Ti/TiNen_US
dc.subjectchlorine contenten_US
dc.subjectresistivityen_US
dc.subjectboundary effectsen_US
dc.titleEnhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structureen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.39.L82en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue2Aen_US
dc.citation.spageL82en_US
dc.citation.epageL85en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000085480100007-
dc.citation.woscount4-
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