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dc.contributor.authorWu, THen_US
dc.contributor.authorWu, JCen_US
dc.contributor.authorHuang, YWen_US
dc.contributor.authorYe, LXen_US
dc.contributor.authorChen, BMen_US
dc.contributor.authorShieh, HPDen_US
dc.date.accessioned2014-12-08T15:45:44Z-
dc.date.available2014-12-08T15:45:44Z-
dc.date.issued2000-02-01en_US
dc.identifier.issn0304-8853en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0304-8853(99)00694-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/30762-
dc.description.abstractWe have shown in previous papers that the magnetic domains could be pinned inside the artificially patterned hole arrays under suitable geometry aspect ratio. Nevertheless, we have found that if we reverse the magnetization directions through domain wall motion, the confined domains expand from smaller territory into larger territory for some samples. In addition, the pinned domains maintained the same moment's orientation after the domain expansion. The possible reason for the pinned domains to retain the same moment's orientation maybe those pinning holes that act as high anisotropy defects. Thus, domain wall motion was around the high anisotropy sites and only peeled away the domain in the land area while the enclosed domain of the hole area maintained the same orientation. Moreover, the feasible reason for the expansion domains is the coercive force, which is perpendicular to the side-walls and pinning the domains inside the holes, are relaxed and thus causing the domains growth. This phenomenon is called the relaxation of pinning domains. (C) 2000 Elsevier Science B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmagnetic pinningen_US
dc.subjectE-beam lithographyen_US
dc.subjectdomain expansionen_US
dc.subjectdomain wall motionen_US
dc.titleRelaxation of pinned domains in patterned magnetic thin filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/S0304-8853(99)00694-0en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.citation.volume209en_US
dc.citation.issue1-3en_US
dc.citation.spage224en_US
dc.citation.epage227en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000085022700063-
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