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dc.contributor.authorWang, HWen_US
dc.contributor.authorChiou, BSen_US
dc.date.accessioned2014-12-08T15:45:46Z-
dc.date.available2014-12-08T15:45:46Z-
dc.date.issued2000-02-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1023/A:1008995902371en_US
dc.identifier.urihttp://hdl.handle.net/11536/30795-
dc.description.abstractTitanium-tungsten is employed as the diffusion barrier in a Cu/barrier/polyimide/Si system. The electromigration damage (EMD) of Cu with a TiW barrier is investigated utilizing an empirical formula. Two activation energies are obtained suggesting a surface electromigration mechanism at low temperature (140-190 degrees C) and a combined migration mechanism at high temperature (190-230 degrees C). The presence of the TiW barrier layer improves the high temperature electromigration resistance. The effects of the TiW barrier on the microstructure and electrical properties of Cu metallization are discussed.en_US
dc.language.isoen_USen_US
dc.titleBarrier layer effect of titanium-tungsten on the electromigration in sputtered copper films on polyimideen_US
dc.typeArticleen_US
dc.identifier.doi10.1023/A:1008995902371en_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume11en_US
dc.citation.issue1en_US
dc.citation.spage17en_US
dc.citation.epage24en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000084708300004-
dc.citation.woscount7-
Appears in Collections:Articles


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