Barrier layer effect of titanium-tungsten on the electromigration in sputtered copper films on polyimide

doi:10.1023/A:1008995902371

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DC 欄位	值	語言
dc.contributor.author	Wang, HW	en_US
dc.contributor.author	Chiou, BS	en_US
dc.date.accessioned	2014-12-08T15:45:46Z	-
dc.date.available	2014-12-08T15:45:46Z	-
dc.date.issued	2000-02-01	en_US
dc.identifier.issn	0957-4522	en_US
dc.identifier.uri	http://dx.doi.org/10.1023/A:1008995902371	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30795	-
dc.description.abstract	Titanium-tungsten is employed as the diffusion barrier in a Cu/barrier/polyimide/Si system. The electromigration damage (EMD) of Cu with a TiW barrier is investigated utilizing an empirical formula. Two activation energies are obtained suggesting a surface electromigration mechanism at low temperature (140-190 degrees C) and a combined migration mechanism at high temperature (190-230 degrees C). The presence of the TiW barrier layer improves the high temperature electromigration resistance. The effects of the TiW barrier on the microstructure and electrical properties of Cu metallization are discussed.	en_US
dc.language.iso	en_US	en_US
dc.title	Barrier layer effect of titanium-tungsten on the electromigration in sputtered copper films on polyimide	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1023/A:1008995902371	en_US
dc.identifier.journal	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS	en_US
dc.citation.volume	11	en_US
dc.citation.issue	1	en_US
dc.citation.spage	17	en_US
dc.citation.epage	24	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000084708300004	-
dc.citation.woscount	7	-
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