1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorWang, SYen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:45:47Z-
dc.date.available2014-12-08T15:45:47Z-
dc.date.issued2000-01-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/30811-
dc.description.abstractA nonuniform quantum well infrared photodetector (QWIP) structure is proposed. By changing the doping concentration and barrier width of each quantum well, the electric field distribution can be tailored. The nonuniform QWIPs show excellent performance compared with conventional uniform structures. The dark current is about an order of magnitude lower and the background limited temperature increases to 77 K. A detectivity of 2.0x10(10) cm Hz(1/2)/W and a responsivity of 0.25 A/W at 8.2 mu m have been obtained for these devices. A simple picture of electric field distribution within the structure is described to explain the results. (C) 2000 American Institute of Physics. [S0021-8979(00)07701-X].en_US
dc.language.isoen_USen_US
dc.titleNonuniform quantum well infrared photodetectorsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume87en_US
dc.citation.issue1en_US
dc.citation.spage522en_US
dc.citation.epage525en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000084244300082-
dc.citation.woscount3-
Appears in Collections:Articles


Files in This Item:

  1. 000084244300082.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...