Nonuniform quantum well infrared photodetectors

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DC 欄位	值	語言
dc.contributor.author	Wang, SY	en_US
dc.contributor.author	Lee, CP	en_US
dc.date.accessioned	2014-12-08T15:45:47Z	-
dc.date.available	2014-12-08T15:45:47Z	-
dc.date.issued	2000-01-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30811	-
dc.description.abstract	A nonuniform quantum well infrared photodetector (QWIP) structure is proposed. By changing the doping concentration and barrier width of each quantum well, the electric field distribution can be tailored. The nonuniform QWIPs show excellent performance compared with conventional uniform structures. The dark current is about an order of magnitude lower and the background limited temperature increases to 77 K. A detectivity of 2.0x10(10) cm Hz(1/2)/W and a responsivity of 0.25 A/W at 8.2 mu m have been obtained for these devices. A simple picture of electric field distribution within the structure is described to explain the results. (C) 2000 American Institute of Physics. [S0021-8979(00)07701-X].	en_US
dc.language.iso	en_US	en_US
dc.title	Nonuniform quantum well infrared photodetectors	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	87	en_US
dc.citation.issue	1	en_US
dc.citation.spage	522	en_US
dc.citation.epage	525	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000084244300082	-
dc.citation.woscount	3	-
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