標題: | LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TITANIUM AND ZIRCONIUM CARBONITRIDE THIN-FILMS FROM M(NET2)4 (M = TI AND ZR) |
作者: | CHIU, HT HUANG, CC 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
公開日期: | 1-四月-1993 |
摘要: | Ti (NEt2)4 and Zr (NEt2)4 were used as single-source precursors to deposit titanium and zirconium carbonitride thin films on Si( 100) and glass substrates at temperatures 673-923 K by low-pressure chemical vapor deposition. The thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, wavelength dispersive spectroscopy, and infrared spectroscopy. The films deposited at high temperatures crystallized into cubic structures as shown by X-ray diffraction. The nitrogen-to-metal ratios were close to unity in most cases while the carbon-to-metal ratios decreased with increasing deposition temperature. At deposition temperatures below 773 K, hydrocarbon stretchings were observed by IR, Attempts to decrease carbon levels in thin films by adding H-2 into the carrier gas showed opposite effects. |
URI: | http://hdl.handle.net/11536/3082 |
ISSN: | 0167-577X |
期刊: | MATERIALS LETTERS |
Volume: | 16 |
Issue: | 4 |
起始頁: | 194 |
結束頁: | 199 |
顯示於類別: | 期刊論文 |