LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TITANIUM AND ZIRCONIUM CARBONITRIDE THIN-FILMS FROM M(NET2)4 (M = TI AND ZR)

Abstract

Ti (NEt2)4 and Zr (NEt2)4 were used as single-source precursors to deposit titanium and zirconium carbonitride thin films on Si( 100) and glass substrates at temperatures 673-923 K by low-pressure chemical vapor deposition. The thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, wavelength dispersive spectroscopy, and infrared spectroscopy. The films deposited at high temperatures crystallized into cubic structures as shown by X-ray diffraction. The nitrogen-to-metal ratios were close to unity in most cases while the carbon-to-metal ratios decreased with increasing deposition temperature. At deposition temperatures below 773 K, hydrocarbon stretchings were observed by IR, Attempts to decrease carbon levels in thin films by adding H-2 into the carrier gas showed opposite effects.