標題: Electrical characteristics of polyoxide prepared by N-2 preannealing
作者: Chang, KM
Lee, TC
Wang, JY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2000
摘要: This paper reports on the electrical characteristics of polyoxide with preoxidation N-2 annealing in a rapid thermal annealing system. By treating the polysilicon film before oxidation, the obtained polyoxide has the desired relative characteristics, i.e., a higher breakdown electric field, a smaller voltage shift, and larger charge-to-breakdown. This improvement is due to the reduction of defects, such as microtwins, inside the grain. (C) 1999 The Electrochemical Society. S1099-0062(99)08-054-2. All rights reserved.
URI: http://dx.doi.org/10.1149/1.1390951
http://hdl.handle.net/11536/30879
ISSN: 1099-0062
DOI: 10.1149/1.1390951
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 3
Issue: 1
起始頁: 39
結束頁: 40
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