標題: | SIMULTANEOUS OCCURRENCE OF MULTIPHASES IN THE INTERFACIAL REACTIONS OF ULTRAHIGH-VACUUM DEPOSITED HF AND CR THIN-FILMS ON (111)SI |
作者: | HSIEH, WY LIN, JH CHEN, LJ 交大名義發表 材料科學與工程學系 National Chiao Tung University Department of Materials Science and Engineering |
公開日期: | 8-Mar-1993 |
摘要: | Simultaneous occurrence of multiphases were observed in the interfacial reactions of ultrahigh vacuum deposited Hf and Cr thin films on (111) Si by high-resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For Hf/Si system, an amorphous interlayer, Hf5Si3 as well as FeB and CrB types of HfSi were found to form simultaneously in samples annealed at 530-degrees-C for 40-80 min. For Cr/Si system, an amorphous interlayer, Cr5Si3, CrSi, and CrSi2 were observed to form in samples annealed at 375-degrees-C for 30 min. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of ultrahigh vacuum deposited refractory thin films. The results called for a reexamination of generally accepted ''difference'' in reaction sequence between bulk and thin-film couples. |
URI: | http://dx.doi.org/10.1063/1.108803 http://hdl.handle.net/11536/3089 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.108803 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 62 |
Issue: | 10 |
起始頁: | 1088 |
結束頁: | 1090 |
Appears in Collections: | Articles |