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dc.contributor.authorKo, FHen_US
dc.contributor.authorWang, MYen_US
dc.contributor.authorWang, TKen_US
dc.date.accessioned2014-12-08T15:45:57Z-
dc.date.available2014-12-08T15:45:57Z-
dc.date.issued1999-12-01en_US
dc.identifier.issn0003-2700en_US
dc.identifier.urihttp://dx.doi.org/10.1021/ac9906779en_US
dc.identifier.urihttp://hdl.handle.net/11536/30906-
dc.description.abstractThe radioactive tracer technique was applied to investigate the migration of cesium and zinc impurities from bottom antireflective coating (BARC) and photoresist (PR) into underlying substrate. The effects of normal baking temperatures and substrate types were studied. Our results indicated that BARC has higher migration ratios than PR, irrespective of the substrate types and normal baking temperatures. The substrate type did not appear to strongly affect the metal migration ratios. However, water and/or solvent evaporation due to temperature change was found to have a significant effect on metal migration. The diffusion profiles of BARC and PR were depicted based on diffusion equations and the migration ratios. Both the UV/visible spectrometric and the gravimetric methods were successfully implemented to evaluate the feasibility of closed-vessel microwave digestion efficiency for BARC and PR samples. By following the established microwave digestion method and the inductively coupled plasma mass spectrometer (ICPMS) determination, the detection limits obtained for multielements were in the ppb and sub-ppb levels. Except for calcium, the spike recoveries of metals ranged from 91 to 132% and 87 to 125% for BARC and PR, respectively. The analytical results were found to be in reasonably good agreement with the Literature values.en_US
dc.language.isoen_USen_US
dc.titleEvaluation of metal migration and determination of trace metals after microwave digestion for lithographic materialsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/ac9906779en_US
dc.identifier.journalANALYTICAL CHEMISTRYen_US
dc.citation.volume71en_US
dc.citation.issue23en_US
dc.citation.spage5413en_US
dc.citation.epage5419en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:000083981900031-
dc.citation.woscount12-
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