The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)

Abstract

The combined effects of N-2-implantation at S/D extension and N2O oxide on 0.18 mu m n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V-th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N2O oxide or N-2-implantatian. However, for p-channel transistors, apposite trends are observed for N2O oxide and N-2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N2O oxide and N-2-implantation.