完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chao, TS | en_US |
dc.contributor.author | Chang, SJ | en_US |
dc.contributor.author | Chien, CH | en_US |
dc.contributor.author | Lin, HC | en_US |
dc.contributor.author | Huang, TY | en_US |
dc.contributor.author | Chang, CY | en_US |
dc.date.accessioned | 2014-12-08T15:46:00Z | - |
dc.date.available | 2014-12-08T15:46:00Z | - |
dc.date.issued | 1999-12-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.38.L1366 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30940 | - |
dc.description.abstract | The combined effects of N-2-implantation at S/D extension and N2O oxide on 0.18 mu m n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V-th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N2O oxide or N-2-implantatian. However, for p-channel transistors, apposite trends are observed for N2O oxide and N-2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N2O oxide and N-2-implantation. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | nitrogen | en_US |
dc.subject | N2O | en_US |
dc.subject | MOSFETs | en_US |
dc.subject | S/D extension | en_US |
dc.title | The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs) | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1143/JJAP.38.L1366 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 38 | en_US |
dc.citation.issue | 12A | en_US |
dc.citation.spage | L1366 | en_US |
dc.citation.epage | L1368 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000084451100005 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |