完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, YS | en_US |
dc.contributor.author | Liaw, SS | en_US |
dc.date.accessioned | 2014-12-08T15:46:03Z | - |
dc.date.available | 2014-12-08T15:46:03Z | - |
dc.date.issued | 1999-11-20 | en_US |
dc.identifier.issn | 0217-9849 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/30962 | - |
dc.description.abstract | An atom located at the center of the constant spherical potential is adopted as a simple model for a quantum dot with impurity. We find that, under this model, the stability of the energy levels of a quantum dot with impurity can be controlled by adjusting either the size or the band gap of the quantum dot. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Level stability of the quantum dots with impurity | en_US |
dc.type | Article | en_US |
dc.identifier.journal | MODERN PHYSICS LETTERS B | en_US |
dc.citation.volume | 13 | en_US |
dc.citation.issue | 27 | en_US |
dc.citation.spage | 977 | en_US |
dc.citation.epage | 981 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000085614300003 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |