標題: Electrical properties of the Si implantation in Mg doped p-GaN
作者: Lai, WC
Yokoyama, M
Tsai, CC
Chang, CS
Guo, JD
Tsang, JS
Chan, SH
光電工程學系
Department of Photonics
公開日期: 1-十一月-1999
摘要: This work performs Si ion implantation to activate and convert the electrical conduction of p-GaN films from p-type to n-type. Multiple implantation method is used to form a uniform Si implanted region in the p-type GaN epitaxial layer. Implantation energies for the multiple implantation are 10, 100, and 200 keV. The implantation dose is 5 x 10(15) cm(2) for each implantation energy. After implantation, the samples were annealed in an N-2 ambient for different annealing temperatures and annealing times. The activation efficiency reaches as high as 20% when annealing the sample at 1000 degrees C,. The carrier activation energy is about 720 meV. The low activation energy indicates that the hopping process mechanism is the dominant mechanism for the activation of the Si implant in p-GaN. In addition, the rectifying I-V characteristic of the p-n GaN diode is also examined.
URI: http://hdl.handle.net/11536/30999
ISSN: 0370-1972
期刊: PHYSICA STATUS SOLIDI B-BASIC RESEARCH
Volume: 216
Issue: 1
起始頁: 561
結束頁: 565
顯示於類別:會議論文


文件中的檔案:

  1. 000084193900108.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。